7401 will not give the expected output, if the circuit is done as it is done for 7400. Some extra components had to be added in 7401 circuit, which is internally included in 7400 chip. That is the pull up resistor. In 7400, there is a built in pull up resistor. 7401, 7401 datasheet pdf, 7401 data sheet, Datasheet4U.com. 7401 Datasheet, 7401 PDF, 7401 Data sheet, 7401 manual, 7401 pdf, 7401, datenblatt, Electronics 7401, alldatasheet, free, datasheet, Datasheets, data sheet, datas. C&K Switches 7401 Toggle Switches are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for C&K Switches 7401 Toggle Switches.
Type Designator: AO7401
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.35 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.4 V
Maximum Drain Current |Id|: 1.4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 3.5 nS
Drain-Source Capacitance (Cd): 37 pF
Maximum Drain-Source On-State Resistance (Rds): 0.115 Ohm
7401 Mosfet Equivalent
Package: SC70-3
AO7401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO7401 Datasheet (PDF)
0.1. ao7401.pdf Size:202K _aosemi
AO740130V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7401 uses advanced trench technology to -30Vprovide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V)
9.1. ao7404.pdf Size:240K _aosemi
AO7404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7404 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 1 A (VGS = 4.5V)operation with gate voltages as low as 1.8V, in the RDS(ON)
9.2. ao7403.pdf Size:110K _aosemi
AO7403P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7403 uses advanced trench technology to provide VDS (V) = -20Vexcellent RDS(ON), low gate charge, and operation with gate ID = -0.7A (VGS = -4.5V)voltages as low as 1.8V, in the small SOT323 footprint. It can RDS(ON)
9.3. ao7400.pdf Size:191K _aosemi
AO740030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7400 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and ID (at VGS=10V) 1.7Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=10V)
9.4. ao7405.pdf Size:207K _aosemi
AO740530V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7405 uses advanced trench technology to -30Vprovide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V)
9.5. ao7408.pdf Size:349K _aosemi
AO740820V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO7408 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=10V) 2Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=4.5V)
9.6. ao7407.pdf Size:345K _aosemi
AO740720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO7407 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.2Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)
9.7. ao7400.pdf Size:1277K _kexin
SMD Type MOSFETN-Channel MOSFETAO7400 (KO7400) Features VDS (V) = 30V ID = 1.7 A (VGS = 10V) RDS(ON) 55m (VGS = 10V)D RDS(ON) 65m (VGS = 4.5V) RDS(ON) 85m (VGS = 2.5V)1 Gate2 SourceG3 DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 12
Datasheet: AO6801, AO6801A, AO6801E, AO6802, AO6804A, AO6808, AO6810, AO7400, IRF640N, AO7403, AO7404, AO7405, AO7407, AO7408, AO7410, AO7411, AO7412.
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Mosfet 7401 Amplifier
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